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1203P60 데이터 시트보기 (PDF) - ON Semiconductor

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1203P60 Datasheet PDF : 15 Pages
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NCP1203
Adj
1
FB
2
CURRENT
SENSE
3
GROUND
4
HV
8
HV CURRENT
SOURCE
80 k
1.2 V
SKIP CYCLE
+ COMPARATOR
NC
-
UVLO HIGH AND LOW
7
INTERNAL VCC INTERNAL REGULATOR
24 k
Q FLIPFLOP
250 ns
L.E.B.
4060100 kHz
CLOCK
SET DCmax = 80% Q
OVERLOAD
MANAGEMENT
VCC
6
RESET
20 k
57 k
VREF
+
25 k
+
-
1V
Drv
±250 mA
5
Figure 2. Internal Circuit Architecture
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC, Drv
16
V
Power Supply Voltage on all other pins except Pin 5 (Drv), Pin 6 (VCC) and Pin 8 (HV)
0.3 to 10
V
Maximum Current into all pins except Pin 6 (VCC) and Pin 8 (HV) when
10 V ESD diodes are activated
5.0
mA
Thermal Resistance, JunctiontoAir, PDIP8 Version
Thermal Resistance, JunctiontoAir, SOIC Version
Thermal Resistance, JunctiontoCase
Maximum Junction Temperature
Temperature Shutdown
RqJA
RqJA
RqJC
TJMAX
100
°C/W
178
57
150
°C
170
°C
Hysteresis in Shutdown
30
°C
Operating Temperature Range
Storage Temperature Range
ESD Capability, Human Body Model, All pins except Pin 6 (VCC) and Pin 8 (HV)
ESD Capability, Machine Model
TJ
40 to +125
°C
Tstg
60 to +150
°C
2.0
kV
200
V
Maximum Voltage on Pin 8 (HV) with Pin 6 (VCC) Decoupled to Ground with 10 mF
500
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device series contains ESD protection rated using the following tests:
Human Body Model (HBM) 2000 V per JEDEC Standard JESD22, Method A114E.
Machine Model (MM) 200 V per JEDEC Standard JESD22, Method A115A.
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