BSS138PW 데이터 시트보기 (PDF) - NXP Semiconductors.
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BSS138PW Datasheet PDF : 16 Pages
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Nexperia
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
0.8
ID
(A)
0.6
017aaa116
(1) (2)
2.4
a
1.8
017aaa022
0.4
1.2
0.2
0.6
(2)
(1)
0.0
0.0
1.0
2.0
3.0
VGS (V)
0.0
−60
0
60
120
180
Tamb (°C)
VDS > ID × RDSon
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
a = --------R----D---S---o---n--------
R D S o n ( 25 ° C )
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
2.0
VGS(th)
(V)
1.5
1.0
0.5
017aaa117
(1)
(2)
(3)
102
(1)
C
(pF)
(2)
10
(3)
017aaa118
0.0
−60
0
60
120
180
Tamb (°C)
1
10−1
1
10
102
VDS (V)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
BSS138PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© Nexperia B.V. 2017. All rights reserved
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