BSS138PW 데이터 시트보기 (PDF) - NXP Semiconductors.
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BSS138PW Datasheet PDF : 16 Pages
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Nexperia
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source breakdown ID = 10 μA; VGS = 0 V
60
voltage
VGS(th)
gate-source threshold ID = 250 μA; VDS = VGS
0.9
voltage
IDSS
IGSS
RDSon
gfs
drain leakage current
gate leakage current
drain-source on-state
resistance
forward
transconductance
VDS = 60 V; VGS = 0 V
Tj = 25 °C
-
Tj = 150 °C
-
VGS = ±20 V; VDS = 0 V
-
[1]
VGS = 5 V; ID = 50 mA
-
VGS = 10 V; ID = 300 mA
-
VDS = 10 V; ID = 200 mA [1] -
Dynamic characteristics
QG(tot)
total gate charge
ID = 300 mA;
-
QGS
gate-source charge
VDS = 30 V;
VGS = 4.5 V
-
QGD
gate-drain charge
-
Ciss
input capacitance
VGS = 0 V; VDS = 10 V;
-
Coss
output capacitance
f = 1 MHz
-
Crss
reverse transfer
-
capacitance
td(on)
turn-on delay time
VDS = 50 V;
-
tr
rise time
RL = 250 Ω;
VGS = 10 V;
-
td(off)
turn-off delay time
RG = 6 Ω
-
tf
fall time
-
Source-drain diode
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V
0.47
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
Typ
-
1.2
-
-
-
1
0.9
700
0.72
0.14
0.24
38
7
4
2
3
9
4
0.75
Max
-
1.5
1
10
100
2
1.6
-
0.8
-
-
50
-
-
6
-
20
-
1.1
Unit
V
V
μA
μA
nA
Ω
Ω
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
BSS138PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© Nexperia B.V. 2017. All rights reserved
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