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BSS138PW

60 V, 320 mA N-channel Trench MOSFET

NXP Semiconductors. 

BSS138PW

60 V, 320 mA N-channel Trench MOSFET

Rev. 1 — 2 November 2010

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a very small

SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

„ Logic-level compatible

„ Very fast switching

„ Trench MOSFET technology

„ AEC-Q101 qualified

1.3 Applications

„ Relay driver

„ High-speed line driver

„ Low-side loadswitch

„ Switching circuits

1.4 Quick reference data

Table 1.

Symbol

VDS

VGS

ID

Quick reference data

Parameter

drain-source voltage

gate-source voltage

drain current

RDSon

drain-source on-state

resistance

Conditions

Tamb = 25 °C

Tamb = 25 °C

Tamb = 25 °C;

VGS = 10 V

Tj = 25 °C;

VGS = 10 V;

ID = 300 mA

Min Typ Max Unit

-

-

60

V

-

-

±20 V

[1] -

-

320 mA

[2] -

0.9 1.6 Ω

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad

for drain 1 cm2.

[2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01.

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