SKW30N60HS 데이터 시트보기 (PDF) - Infineon Technologies

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SKW30N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SKW30N60HS

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Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Symbol

Conditions

min.

td(on)

Tj=150°C

-

tr

td(off)

VCC=400V,IC=30A,

VGE=0/15V,

RG= 1.8Ω

-

-

tf

Lσ1) =60nH,

-

Eon

Cσ1) =40pF

Energy losses include

-

Eoff

“tail” and diode

-

Ets

reverse recovery.

-

td(on)

Tj=150°C

-

tr

td(off)

VCC=400V,IC=30A,

VGE=0/15V,

RG= 11Ω

-

-

tf

Lσ1) =60nH,

-

Eon

Cσ1) =40pF

Energy losses include

-

Eoff

“tail” and diode

-

Ets

reverse recovery.

-

Value

typ.

16

13

122

29

0.78

0.48

1.26

20

19

274

27

0.91

0.70

1.61

Unit

max.

ns

mJ

ns

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

Tj=150°C

-

190

tS

VR=400V, IF=30A,

-

30

tF

diF/dt=1250A/µs

-

160

Diode reverse recovery charge

Qrr

-

2.0

Diode peak reverse recovery current Irr m

-

24

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

-

480

ns

µC

A

A/µs

1) Leakage inductance L σ an d Stray capacity Cσ due to test circuit in Figure E.

Power Semiconductors

4

Rev. 2 Aug-02

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