SKW30N60HS 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

SKW30N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SKW30N60HS

^

500ns

IF=60A

450ns

400ns IF=30A

350ns

300ns IF=15A

250ns

200ns

150ns

100ns

0A/µs 250A/µs 500A/µs 750A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

2,8µC

2,6µC

2,4µC

2,2µC

IF=60A

2,0µC

1,8µC

IF=30A

1,6µC

1,4µC

1,2µC IF=15A

1,0µC

0A/µs 250A/µs 500A/µs 750A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current

slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

IF=30A IF=60A

24A

20A

16A

IF=15A

12A

8A

4A

0A

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current

slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

-400A/µs

-300A/µs

-200A/µs

-100A/µs

-0A/µs

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

Power Semiconductors

10

Rev. 2 Aug-02

Share Link: