SKW30N60HS 데이터 시트보기 (PDF) - Infineon Technologies
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SKW30N60HS Datasheet PDF : 14 Pages
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SKW30N60HS
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High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
G
E
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff)
Tj
Package
SKW30N60HS
600V
30
480µJ 150°C TO-247AC
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
Ordering Code
Q67040-S4503
Value
Unit
600
V
A
41
30
112
112
41
28
112
±20
V
±30
10
µs
250
W
-55...+150
°C
175
260
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2 Aug-02
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