AD743JR-16-REEL7 데이터 시트보기 (PDF) - Analog Devices

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AD743JR-16-REEL7

Ultralow Noise BiFET Op Amp

Analog Devices 

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V

Internal Power Dissipation2

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VS

Output Short Circuit Duration . . . . . . . . . . . . . . . . Indefinite

Differential Input Voltage . . . . . . . . . . . . . . . . . . +VS and –VS

Storage Temperature Range (N, R) . . . . . . . –65°C to +125°C

Operating Temperature Range

AD743J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C

Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C

NOTES

1 Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; and functional operation

of the device at these or any other conditions above those indicated in the

operational section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

2 8-lead PDIP: ␪JA = 100°C/W, ␪JC = 30°C/W.

16-lead SOIC: ␪JA = 100°C/W, ␪JC = 30°C/W.

ESD SUSCEPTIBILITY

An ESD classification per method 3015.6 of MIL-STD-883C has

been performed on the AD743. The AD743 is a Class 1 device,

passing at 1000 V and failing at 1500 V on null Pins 1 and 5,

when tested, using an IMCS 5000 automated ESD tester. Pins

other than null pins fail at greater than 2500 V.

ORDERING GUIDE

Model

AD743JN

AD743JR-16

AD743JR-16-REEL

AD743JR-16-REEL7

*N = PDIP; R = SOIC.

Temperature

Range

0°C to 70°C

0°C to 70°C

0°C to 70°C

0°C to 70°C

AD743

Package

Option*

N-8

R-16

Tape and Reel

Tape and Reel

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection. Although the

AD743 features proprietary ESD protection circuitry, permanent damage may occur on devices

subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended

to avoid performance degradation or loss of functionality.

REV. E

–3–

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