BF998 데이터 시트보기 (PDF) - NXP Semiconductors.

부품명

상세내역

일치하는 목록

BF998

Silicon N-channel dual-gate MOS-FETs

NXP Semiconductors. 

NXP Semiconductors

Silicon N-channel dual-gate MOS-FETs

Product specification

BF998; BF998R

handbook, full pagewidth

50 Ω

input

VDD

100 kΩ

140 kΩ

1 nF

1 nF

L1

L2

Vagc

1 nF

270 kΩ

1 nF

C1

2 to 18 pF

C2

0.5 to 3.5 pF

1.8 kΩ

1 nF

360 Ω

VDD

VDD

1 nF

L3

C3

0.5 to

3.5 pF

L4

1 nF

50 Ω

output

C4

4 to 40 pF

MGE801

VDD = 12 V; GS = 3.3 mS; GL = 1 mS.

L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.

L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.

L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.

Fig.18 Gain control test circuit at f = 800 MHz.

1996 Aug 01

9

Share Link: