BF998 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF998 Datasheet PDF : 15 Pages
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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
24
handbIDook, halfpage
(mA)
20
16
MGE813
VG1-S =
0.4 V
0.3 V
0.2 V
12
0.1 V
0V
8
−0.1 V
−0.2 V
4
−0.3 V
−0.4 V
−0.5 V
0
0
2
4
6
8
10
VDS (V)
24
handbIoDok, halfpage
(mA)
20
16
12
8
4
0
−1
MGE815
3V
VG2-S = 4 V
2V
1V
0V
0
VG1 (V)
1
VG2-S = 4 V; Tamb = 25 C.
Fig.5 Output characteristics; typical values.
VDS = 8 V; Tamb = 25 C.
Fig.6 Transfer characteristics; typical values.
24
handboIDok, halfpage
(mA)
20
MGE814
max typ
16
12
min
8
4
0
−1600 −1200 −800
−400
0
400
VG1 (mV)
handbook,3h0alfpage
|yfs|
(mS)
24
18
MGE811
4V
3V
2V
1V
12
6
VG2-S = 0 V
0
0
4
8
0.5 V
12
16
20
ID (mA)
VDS = 8 V; VG2-S = 4 V; Tamb = 25 C.
Fig.7 Drain current as a function of gate 1
voltage; typical values.
1996 Aug 01
VDS = 8 V; Tamb = 25 C.
Fig.8 Forward transfer admittance as a function of
drain current; typical values.
5
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