BF998 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF998 Datasheet PDF : 15 Pages
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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air; BF998 note 1
note 2
Rth j-a
thermal resistance from junction to ambient in free air; BF998R note 1
Notes
1. Device mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
2. Device mounted on a printed-circuit board.
VALUE
460
500
500
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)G1-SS
V(BR)G2-SS
V(P)G1-S
V(P)G2-S
IDSS
IG1-SS
IG2-SS
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
Note
1. Measured under pulse condition.
CONDITIONS
VG2-S = VDS = 0; IG1-SS = 10 mA
VG1-S = VDS = 0; IG2-SS = 10 mA
VG2-S = 4 V; VDS = 8 V; ID = 20 A
VG1-S = 0; VDS = 8 V; ID = 20 A
VG2-S = 4 V; VDS = 8 V; VG1-S = 0; note 1
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 5 V
MIN.
6
6
2
MAX. UNIT
20 V
20 V
2.0 V
1.5 V
18 mA
50 nA
50 nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VDS = 8 V; VG2-S = 4 V; ID = 10 mA.
SYMBOL
PARAMETER
CONDITIONS
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
noise figure
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; GS = 2 mS; BS = BSopt
f = 800 MHz; GS = 3.3 mS; BS = BSopt
MIN. TYP. MAX. UNIT
21 24
mS
2.1 2.5 pF
1.2
pF
1.05
pF
25
fF
0.6
dB
1.0
dB
1996 Aug 01
4
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