C908   데이터시트

MITSUBISHI ELECTRIC

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

PerkinElmer Inc

Channel photomultiplexer

MITSUBISHI ELECTRIC

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

Usha Ltd

Transistor. Low frequency, Low Noise Amplifier / Collector-base voltage Vcbo = 30V

Usha Ltd

Transistors

Hamamatsu Photonics

PSD signal processing circuit

Hamamatsu Photonics

Driver circuit for Si photodiode array

Usha Ltd

Transistors, pre-amplifier, low lewel & low noice, 50V, 100mA, 450mW

Usha Ltd

Transistor. AM converter, FM/RF amplifier of low noise. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 25mA.

Hamamatsu Photonics

Driver circuit for CMOS linear image sensor