Features and Benefits
PNP Transistor
   • BVCEO > -40V
   • IC = -3A Continuous Collector Current
   • Low Saturation Voltage (-220mV max @ -1A)
   • RSAT = 104mΩ for a low equivalent On-Resistance
   • hFE characterized up to -3A for high current gain hold up
Schottky Diode
   • BVR > 40V
   • IFAV = 3A Average Peak Forward Current
   • Low VF < 500mV (@1A) for reduced power loss
   • Fast switching due to Schottky barrier
• Low profile 0.8mm high package for thin applications
• RθJA efficient, 40% lower than SOT26
• 6mm2 footprint, 50% smaller than TSOP6 and SOT26
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability

APPLICATIONs
• DC – DC Converters
• Charging circuits
• Mobile phones
• Motor control
• Portable applications