Coaxial High Power Amplifier
50Ω 100W 20 to 500 MHz
Product Overview
The Mini-Circuits ZHL-100W-GAN+ utilizes high power Galium Nitride (GaN) output stage, which results in higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. GaN FET’s boast a
maximum junction temperature of 250° C translating into higher operating temperatures without adversely affecting the MTBF.
The Big Deal
• High Efficiency, 50% typ.
• High Output Power, 100W
• GaN Output Stage
• High Output IP2, +84 dBm typ.
• High Output IP3, +60 dBm typ.