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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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XP1006-FA 데이터시트 - Mimix Broadband

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XP1006-FA

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MIMIX
Mimix Broadband MIMIX

General Description
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The device comes in a 10 pin, high frequency, LCC flange package. The package has a copper composite base material and a laminated ceramic substrate. This device is well suited for radar applications.


FEATUREs
X-Band 10W Power Amplifier
Flange Package
21.5 dB Large Signal Gain
+40.5 dBm Saturated Output Power
37% Power Added Efficiency
100% On-Wafer RF, DC and Output Power Testing

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제조사
8.5-11.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband
8.5-11.0 GHz GaAs MMIC Power Amplifier
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8.5-11.0 GHz GaAs MMIC Power Amplifier
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8.5-11.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband
XP1006-BD-EV1 - 8.5-11.0 GHz GaAs MMIC Power Amplifier
Unspecified
11.0-16.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband
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Amplifier, Power, 2W 5.7-8.5 GHz
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