SWITCHMODE Schottky Barrier Rectifier POWERTAP II Package

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.

• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• Matched Dual Die Construction; May be Paralleled for High Current Output
• Low Forward Voltage