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WS57C256F-70J 데이터시트 - STMicroelectronics

WS57C256F image

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WS57C256F-70J

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

GENERAL DESCRIPTION
The WS57C256F is a High Performance 32K x 8 UV Erasable EPROM. It is manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 35 ns Address Access Time (tACC) and 35 ns Chip Enable Time (tCE). It was designed utilizing WSIs patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size. The low standby power capability of this 256 K product (200 µA in a CMOS interface environment) is especially attractive.

• Fast Access Time
   — tACC= 35 ns
   — tCE= 35 ns
• Low Power Consumption
   — 200 µA Standby ICC
• Immune to Latch-UP
    — Up to 200 mA
• ESD Protection Exceeds 2000 Volts
• Available in 300 Mil DIP and PLDCC
•DESC SMD No. 5962-86063

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제조사
32K x 8 High-Speed CMOS EPROM
Cypress Semiconductor
MILITARY HIGH SPEED 32K x 8 CMOS EPROM
STMicroelectronics
32K x 8 CMOS EPROM Memory
MITSUBISHI ELECTRIC
256K (32K x 8) CMOS EPROM ( Rev : 2004 )
Microchip Technology
256K (32K x 8) CMOS EPROM
Microchip Technology
256K-BIT [32K x 8] CMOS EPROM
Macronix International
256K-bit CMOS EPROM (32K x 8)
Philips Electronics
HIGH SPEED 16K x 8 CMOS EPROM
STMicroelectronics
WS27C256L MILITARY 32K X 8 CMOS EPROM
STMicroelectronics
262,144-Bit (32K x 8) High Performance CMOS EPROM
Fairchild Semiconductor

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