GeneralDescription
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.This latest technology has been especially designed to minimize on-state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.

FEATUREs
2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V
Ultra-low Gate Charge (Typical 9.0nC)
Fast Switching Capability
100% Avalanche Tested
Isolation Voltage(VISO=4000VAC)
Maximum Junction Temperature Range(150℃)
Halogenfree(WFF2N65-HF)