General Description
This Power MOSFET is produced using Winsemis advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS.

FEATUREs
■ 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 9.1nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃ )