General Description
The VDS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications

FEATUREs
• JEDEC standard LVTTL 3.3V power supply
• MRS Cycle with address key programs
    -CAS Latency (2 & 3)
    -Burst Length (1,2,4,8,& full page)
    -Burst Type (sequential & Interleave)
• 4 banks operation
• All inputs are sampled at the positive edge of the system clock
• Burst Read single write operation
• Auto & Self refresh
• DQM for masking
• 8192 Refresh Cycles
• Package:54-pins 400 mil TSOP-Type II