INTRODUCTION
The UT8R256K16 is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by active LOW and HIGH chip enables ( E1, E2), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces power consumption by more than 90% when deselected.

FEATURES
❐ 15ns maximum access time
❐ Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs
❐ CMOS compatible inputs and output levels, three-state bidirectional data bus
   - I/O Voltage 2.5 to 3.3 volts, 1.8 volt core
❐ Radiation performance
   - Intrinsic total-dose: 100K rad(Si)
   - SEL Immune >100 MeV-cm2/mg
   - Onset LET > 24 MeV-cm2/mg
   - Memory Cell Saturated Cross Section, 1.0 x 10-8cm2/bit
      - 1.0E x 10-10 errors/bit-day, Adams to 90% geosynchronous heavy ion
   - Neutron Fluence: 3.0E14n/cm2
   - Dose Rate (estimated)
      - Upset 1.0E9 rad(Si)/sec
      - Latchup >1.0E11 rad(Si)/sec
❐ Packaging options:
   - TBD
❐ Standard Microcircuit Drawing pending
   - QML compliant part