US5U29 데이터시트 - ROHM Semiconductor
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US5U29
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5 Pages
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69 kB
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ROHM Semiconductor
Features
1) The US5U29 combines Pch MOS FET with a Schottky barrier diode in a TUMT5 package.
2) Low on-resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
APPLICATIONs
Load switch, DC/DC conversion
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