DESCRIPTION
This UK3919N-Channel Logic Level MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially.  The UK3919is well suited for where low in-line power loss is needed in a very small outline surface mount package, such as low voltage and battery powered applications.

FEATURES
* RDS(ON)= 5.6mΩ@VGS= 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified