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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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U62H64DG35L 데이터시트 - Zentrum Mikroelektronik Dresden AG

U62H64 image

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U62H64DG35L

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8 Pages

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132.7 kB

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Zentrum
Zentrum Mikroelektronik Dresden AG Zentrum

Description
The U62H64 is a static RAM manufactured using a CMOS process technology with the following operating modes:
    - Read - Standby
    - Write - Data Retention
The memory array is based on a 6-transistor cell


FEATUREs
❐ Fast 8192 x 8 bit static CMOS RAM
❐ 20 ns, 25 ns, 35 ns Access Times
❐ Bidirectional data inputs and data outputs
❐ Three-state outputs
❐ Data retention current at 3 V: < 10 µA (standard)
❐ Standby current standard < 30 µA
❐ Standby current low power (L) < 5 µA
❐ TTL/CMOS-compatible
❐ Automatic reduction of power dissipation in long Read or Write cycles
❐ Power supply voltage 5 V
❐ Operating temperature ranges: 0 to 70 °C -25 to 85 °C -40 to 85 °C
❐ Quality assessment according to CECC 90000, CECC 90100 and CECC 90111
❐ ESD protection > 2000 V (MIL STD 883C M3015.7)
❐ Latch-up immunity > 200 mA
❐ Packages: PDIP28 (300 mil) SOJ28 (300 mil)

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제조사
Automotive Fast 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Automotive Fast 8K x 8 SRAM
Unspecified
Automotive Fast 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Automotive 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
8K X 8 CMOS SRAM
ROHM Semiconductor
Standard 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Fast 8K x 24 SRAM
Zentrum Mikroelektronik Dresden AG
8K X 8-Bit CMOS SRAM
Hyundai Micro Electronics
Low Voltage 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
CMOS 8K x 8-Bit SRAM
Holtek Semiconductor

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