제조사
Vishay Semiconductors
DESCRIPTION
TSMF1000 series are infrared, 890 nm emitting diodes in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: GW, RGW, yoke, axial
• Dimensions (L x W x H in mm): 2.5 x 2 x 2.7
• Peak wavelength: λp = 890 nm
• High radiant power
• Angle of half intensity: ϕ = ± 17°
• Low forward voltage
• Suitable for high pulse current operation
• Versatile terminal configurations
• Package matches with detector TEMD1000
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2015 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
