BVCBO      -50V
BVCEO      -40V
IC         -5.5A
VCE(SAT)   -175mV @ IC / IB = -3.5A / -175mA

FEATUREs
● Adoption of FBET and MBIT processes.
● High current capacitance.
● Low collector-to-emitter saturation voltage.
● High-speed switching.
● Ultrasmall package facilitales miniaturization in end products.
● High allowable power dissipation.