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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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TPD1011S 데이터시트 - Toshiba

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TPD1011S

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High−side Power Switch for Motors, Solenoids, and Lamp Drivers

TPD1011S is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device offers intelligent self-protection and diagnostic functions.


FEATUREs
● A monolithic power IC with a new structure combining a control block (Bi−CMOS) and a vertical power MOS FET (π−MOS) on a single chip.
● One side of load can be grounded to a high−side switch.
● Can directly drive a power load from a microprocessor.
● Built−in protection against thermal shutdown and load short circuiting. Also incorporates a diagnosis function that allows diagnosis output tobe read externally at load short circuiting, opening, or overtemperature.
● Up to −10V of counterelectromotive force from an L load can be applied.
● Low on resistance : RON = 60mΩ (max)
● Low operating current : IDD = 1mA (typ.) (@VDD = 12V, VIN = 0V)
● 5−pin TO−220 insulated package.
● Three standard lead configurations.

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제조사
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
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Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
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Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit ( Rev : 2008 )
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Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit ( Rev : 2006 )
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Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit ( Rev : 2002 )
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit ( Rev : 2002 )
Toshiba

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