TPCF8101(2002) 데이터시트 - Toshiba
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TPCF8101
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Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −12 V)
• Enhancement-model: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 µA)
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