TPC8202 데이터시트 - Toshiba
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TPC8202
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Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
• 2.5-V Gate drive
• Small footprint due to small and thin package
• Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.)
• High forward transfer admittance : |Yfs| = 9 S (typ.)
• Low leakage current : IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement−mode : Vth = 0.5~1.1 V (VDS = 10 V, ID = 200 µA)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
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