TPC8119 데이터시트 - Toshiba
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TPC8119
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Lithium-Ion Battery Applications
Load switch Applications
Notebook PC Applications
• Small footprint due to a small and thin package
• Low drain-source ON-resistance: RDS (ON)= 10 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 24 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS= −30 V)
• Enhancement mode: Vth= −0.8 to −2.0 V (VDS= −10 V, ID= −1 mA)
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) ( Rev : 2009 )
Toshiba
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