TPC8041 데이터시트 - Toshiba
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TPC8041
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Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 26 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) ( Rev : 2008 )
Toshiba
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