High-Speed Switching Applications
MOS Gate Drive Applications
• NPN and PNP transistors are mounted on a compact and slim package.
• High DC current gain : NPN hFE = 400 to 1000
: PNP hFE = 200 to 500
• Low collector-emitter saturation voltage
: NPN VCE (sat) = 0.17 V (max)
: PNP VCE (sat) = - 0.23 V (max)
• High-speed switching : NPN tf = 85 ns (typ.)
: PNP tf = 70 ns (typ.)