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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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TLP747GF(2002) 데이터시트 - Toshiba

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TLP747GF

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The TOSHIBA TLP747GF consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP747G. (both condition and limits)

• Peak off−state voltage: 400V min.
• Trigger LED current: 15mA max.
• On−state current: 150mA max.
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 1994
                          Certificate no. 7364
                          BS EN60950: 1992
                          Certificate no. 7365
• SEMKO approved: SS4330784, certificate no. 9325163
                                                                       no. 9522142
• Isolation voltage: 4000Vrms min.
• Option (D4) type
   VDE approved: DIN VDE0884 / 06.92,
                             Certificate no.74286, 91808
   Maximum operating insulation voltage: 890, 1130VPK
   Highest permissible over voltage: 6000, 8000VPK
   (Note) When a VDE0884 approved type is needed, please designate the “ Option (D4) ”
• Creepage distance: 8.0mm (min.)
   Clearance: 8.0mm (min.)
   Internal creepage path: 4.0mm (min.)
   Insulation thickness: 0.5mm (min.)
• Conforming safety standards:
   DIN 57 804. VDE0804 / 1.83
   DIN IEC65 / VDE0860 / 8.81
   DIN IEC380 / VDE0806 / 8.81
   DIN IEC435 / VDE0805 / draft nov. 84
   DIN IEC601T1 / VDE0750T1 / 5.82
   BS7002: 1989 (EN60950)

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