TK10A60D(Q,M) 데이터시트 - Toshiba
부품명
TK10A60D(Q,M)
Other PDF
no available.
PDF
page
6 Pages
File Size
147.1 kB
제조사
Toshiba
• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
부품명
상세내역
PDF
제조사
Switching Regulator Applications / TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Toshiba
Share Link: