Complementary Silicon High-Power Transistors

. . . for general–purpose power amplifier and switching applications.

• 10 A Collector Current
• Low Leakage Current — ICEO = 0.7 mA @ 60 V
• Excellent dc Gain — hFE = 40 Typ @ 3.0 A
• High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz