Description
The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes.
The TGF4230-SCC is readily assembled using automatic equipment.
For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

KEY FEATUREs and Performance
• Nominal Pout of 28.5 dBm at 8.5 GHz
• Nominal Gain of 10.0 dB at 8.5 GHz
• Nominal PAE of 55 % at 8.5 GHz
• 1200 µm HFET
• 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in)
• Bias at 8 Volts, 96 mA

Primary Applications
• Cellular Base Stations
• High dynamic-range LNAs
• Military and Space