DESCRIPTION
   The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM7T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

FEATURES
• Power supply voltage
   VDD = 2.3 V~3.6 V
• Operating temperature
   Ta = −40°C~85°C
• Organization
   16M × 8 bits/8M × 16 bits
• Functions
• Simultaneous Read/Write
   Page Read
   Auto Program, Auto Page Program
   Auto Block Erase, Auto Chip Erase
   Fast Program Mode / Acceleration Mode
   Program Suspend/Resume
   Erase Suspend/Resume
   data polling/Toggle bit
   block protection, boot block protection
   Automatic Sleep, support for hidden ROM area
   common flash memory interface (CFI)
   Byte/Word Modes
• Block erase architecture
   8 × 8 Kbytes/255 × 64 Kbytes
• Boot block architecture
   TC58FVM7T2A: top boot block
   TC58FVM7B2A: bottom boot block
• Mode control
   Compatible with JEDEC standard commands
• Erase/Program cycles
   105 cycles typ.
• Access Time (Random/Page)
• Power consumption
   10 µA (Standby)
   15 mA (Program/Erase operation)
   55 mA (Random Read operation)
   11 mA (Address Increment Read operation)
   5 mA (Page Read operation)
• Package
   TSOPⅠ 56-P-1420-0.50A (weight: 0.61g)