DESCRIPTION
The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes:
528 bytes u32 pages/8k words + 256 words:264 words x 32 pages). 

FEATURES
Organization            TC58DxM72A1xxxx          TC58DxM72F1xxxx
  Memory cell allay   528 x 32K x8                  264 x 32k x 16
  Register               528 x 8                          264 x 16
  Page size             528 bytes                       264 words
  Block size            (16K 512) bytes                (8k + 256) words
Modes
  Read, Reset, Auto Page Program
  Auto Block Erase, Status Read
Mode control
  Serial input/output
  Command control
Power supply             TC58DVM72x1xxxx         TC58DAM72x1xxxx
                               Vcc: 2.7V to 3.6V           2.7V to 3.6V
                               Vccq: 2.7V to 3.6V         1.65V to 1.95V
Program/Erase Cycles   1E5 cycle (with ECC)
Access time
  Cell array to register  25 Ps max
  Serial Read Cycle  50 ns min
Operating current
  Read (50 ns cycle)  10 mA typ.
  Program (avg.)  10 mA typ.
  Erase (avg.)  10 mA typ.
  Standby 50 PA max.
Package
  TSOP I 48-P-1220-0.50 (Weight:0.53g typ)