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TC3889 데이터시트 - ETC1

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TC3889

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ETC1
ETC1 ETC1

DESCRIPTION
The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is designed to provide the single power supply application. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality


FEATURES
• 5W Typical Output Power
• 12dB Typical Linear Power Gain at 2.0GHz
• High Linearity: IP3 = 47 dBm Typical
• High Power Added Efficiency: Nominal PAE of 35%
• Breakdown Voltage: BVDGO ≥ 18V
• Wg = 12 mm
• 100 % DC Tested
• Suitable for High Reliability Application

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제조사
2W Packaged Self-Bias PHEMT GaAs Power FETs
Transcom, Inc.
2W Packaged Self-Bias PHEMT GaAs Power FETs
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2 W Packaged Single-Bias PHEMT GaAs Power FETs ( Rev : 2008 )
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7 W Packaged Single-Bias PHEMT GaAs Power FETs
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1W Low-Cost Packaged PHEMT GaAs Power FETs
Unspecified
Plastic Packaged Low Noise PHEMT GaAs FETs
Transcom, Inc.
Low Noise Ceramic Packaged PHEMT GaAs FETs
Transcom, Inc.
Low Noise Ceramic Packaged PHEMT GaAs FETs
Unspecified
Plastic Packaged Low Noise PHEMT GaAs FETs
Transcom, Inc.
Low Noise Ceramic Packaged PHEMT GaAs FETs ( Rev : 2002 )
Transcom, Inc.

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