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T431616A 데이터시트 - Taiwan Memory Technology

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T431616A

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31 Pages

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1.5 MB

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TMT
Taiwan Memory Technology TMT

GRNERAL DESCRIPTION
The T431616A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle . Range of operating frequencies , programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth , high performance memory system applications.


FEATURES
• 3.3V power supply
• Clock cycle time : 6 / 7 / 8 / 10 ns
• Dual banks operation
• LVTTL compatible with multiplexed address
• All inputs are sampled at the positive going edge of system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto refresh and self refresh
• 32ms refresh period (2K cycle)
• MRS cycle with address key programs
    - CAS Latency ( 2 & 3 )
    - Burst Length ( 1 , 2 , 4 , 8 & full page)
    - Burst Type (Sequential & Interleave)
• Available package type in 50 pin TSOP(II) and 60-pin CSP.
• Operating temperature :
    - -5 ~ +70 °C
    - -40 ~ +85 °C

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제조사
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Taiwan Memory Technology
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Taiwan Memory Technology
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Taiwan Memory Technology
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Taiwan Memory Technology
512K x 16bit x 2Banks Synchronous DRAM
Taiwan Memory Technology
512K x 16Bit x 2Banks Synchronous DRAM
Unspecified
512K x 16Bit x 2Banks Synchronous DRAM
[Elite Semiconductor Memory Technology Inc.
1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Samsung
1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Samsung
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
Taiwan Memory Technology

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