General Description
The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Product Features
• Frequency: DC to 6 GHz
• Output Power (P3dB): 10 W Peak at 3.1 GHz
• Linear Gain: >17 dB at 3.1 GHz
• Operating Voltage: 32 V
• Low thermal resistance package

APPLICATIONs
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers