datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  Taiwan Memory Technology  >>> T14L1024N-10W PDF

T14L1024N-10W 데이터시트 - Taiwan Memory Technology

T14L1024N image

부품명
T14L1024N-10W

Other PDF
  no available.

PDF
DOWNLOAD     

page
13 Pages

File Size
80.6 kB

제조사
TMT
Taiwan Memory Technology TMT

GENERAL DESCRIPTION
The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance CMOS technology, access times down to 10ns are achieved.


FEATURES
• Fast Address Access Times : 10/12/15ns
• Single 3.3V ±0.3V power supply
• Center power/ground pin configuration
• Low Power Consumption : 110/105/100mA
• TTL I/O compatible
• 2.0V data retention mode
• Automatic power-down when deselected
• Available packages :
    - 32-pin 300 mil and 400 mil SOJ
    - 32-pin TSOP 8x13.4mm and 8x20mm
    - 36-Ball CSP (8x10mm)

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

부품명
상세내역
PDF
제조사
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Circuit Solution Inc
128K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Circuit Solution Inc

Share Link: GO URL

EnglishEnglish Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]