[SAMWIN]

General Description
This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.

FEATUREs
• N-Channel MOSFET  
• BVDSS (Minimum)    : 600 V
• RDS(ON) (Maximum)  : 1 ohm
• ID                 : 7.0 A
• Qg (Typical)       : 30 • PD (@TC=25 ℃)