General Description
This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.

FEATUREs
■ High ruggedness
■ RDS(ON) (Max 0.008 Ω)@VGS=10V
■ Gate Charge (Typ 146nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested