Description
SVF7N65T/F/S N-channel enhancement mode high voltage power MOS field effect transistor adopts ± Manufactured by Lan Microelectronics F-CellTM planar high-voltage VDMOS process technology. Advanced Technology and Cell The structure makes the product have low on-resistance, superior switching performance and high avalanche Wear resistance.
This product can be widely used in AC-DC switching power supply, DC-DC power converter, high voltage H-bridge PWM motor drive.

FEATUREs
✦ 7A, 650V, RDS(on)(Typical)=1.1Ω@VGS=10V
✦ Low gate charge
✦ Low reverse transfer capacitance
✦ Fast switching speed
✦ Improved dv/dt capability