GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cell™ structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES
∗2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V
∗ Low gate charge
∗Low Crss
∗Fast switching
∗ Improved dv/dt capability