제조사
STMicroelectronics
DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns switching speed, gate charge and ruggedness.
■ TYPICAL RDS(on) = 0.31Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET
STMicroelectronics
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
N-CHANNEL 500V - 0.32Ω - 14A TO-247 MDmesh™ Power MOSFET ( Rev : 2002 )
STMicroelectronics
500V, 14A N-Channel MOSFET
Alpha and Omega Semiconductor
N-CHANNEL 500V - 0.40 Ω - 14A - TO-247 PowerMESH™ MOSFET
STMicroelectronics
500V, 14A N-Channel MOSFET
Alpha and Omega Semiconductor
500V, 14A N-Channel MOSFET ( Rev : V2 )
Alpha and Omega Semiconductor
500V, 14A N-Channel MOSFET
Unspecified
500V, 14A N-Channel MOSFET
Alpha and Omega Semiconductor
14A, 500V N-CHANNEL POWER MOSFET
Unisonic Technologies