STW11NM80(2005) 데이터시트 - STMicroelectronics
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STW11NM80
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STMicroelectronics
DESCRIPTION
The MDmesh™ associates the Multiple Drain process with the Company’s PowerMesh™ horizontal layout assuring an oustanding low on-resistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General Features
■ TYPICAL RDS(on) = 0.35 Ω
■ LOW GATE INPUT RESISTANCE
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ BEST RDS(on)*Qg IN THE INDUSTRY
APPLICATIONS
The 800 V MDmesh™ family is very suitable for
single switch applications in particular for Flyback
and Forward converter topologies and for ignition
circuits in the field of lighting.
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제조사
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
Unspecified
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
STMicroelectronics
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET
New Jersey Semiconductor
N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESH™ MOSFET
STMicroelectronics
N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET
STMicroelectronics
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-protected SuperMESHTM Power MOSFET
Unspecified
N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™ Power MOSFET
STMicroelectronics
N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET
STMicroelectronics
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
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