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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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STTH1512G(2010) 데이터시트 - STMicroelectronics

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STTH1512G

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.
Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.
The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.


FEATUREs
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
   operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated package: DOP3I
   – Electrical insulation = 2500 V rms
   – Capacitance = 12 pF


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제조사
Ultrafast recovery - 1200 V diode
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Ultrafast recovery - 1200 V diode
STMicroelectronics
Ultrafast recovery - 1200 V diode
STMicroelectronics
Ultrafast recovery - 1200 V diode
STMicroelectronics
Ultrafast recovery - 1200 V diode
STMicroelectronics
Ultrafast recovery - 1200 V diode
STMicroelectronics
Ultrafast recovery - 1200 V diode
STMicroelectronics
Ultrafast recovery - 1200 V diode
STMicroelectronics

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