Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

FEATUREs
• No or negligible reverse recovery
• Switching behavior independent of
   temperature
• Suited for specific bridge-less topologies
• High forward surge capability
• Insulated package:
   – Capacitance: 7 pF
   – Insulated voltage: 2500 V rms